American memory chip manufacturer Micron Technology aims to achieve 20-25% share of the HBM (high-bandwidth memory) market by August 2025 according to recent reports. This ambitious goal places Micron in direct competition with industry giants SK Hynix and Samsung, both of which are also vying for dominance in this lucrative sector.
HBM is experiencing a surge in demand, driven by the growing need for advanced AI GPU computing power. SK Hynix is currently leading the market, but Micron is making notable progress. Samsung is also advancing, notably through its collaboration with AMD to supply HBM3e for the new AMD Instinct MI325X AI accelerator, which integrates 288GB of HBM3e memory.
Micron attributes its advancements in HBM3e to its sophisticated packaging and design capabilities, along with the integration of its proprietary processes. The company is also actively developing the next generation of HBM4 memory, which is expected to debut next year, catering to the next wave of AI GPUs.
Micron is expanding its global operations, including a $5.1 billion investment a new DRAM memory chip fabrication plant in Japan, to meet growing demand. The company is also receiving $6.1 billion in US funding for its fabrication facilities in New York and Idaho.
At Computex 2024, Micron also announced that it is sampling its new 32Gbps GDDR7 graphics memory. This supports over 1.5TB/sec of memory bandwidth, 60% higher than GDDR6, and offers an improvement of over 50% in energy efficiency. The product is expected to start shipping in the second half of this year.
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